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₹54
50% Off
₹22.14
+ ₹4.86 GSTStock: Outofstock
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About this item
The IRF3205 MOSFET (Pack of 3) is a high-performance N-channel power MOSFET designed for efficient switching applications. Housed in a TO-220 package, each MOSFET in this pack offers a maximum drain-source voltage (Vds) of 55V, making it suitable for various power electronics projects. With a low on-resistance (Rds(on)) of 8 mΩ at a gate-source voltage (Vgs) of 10V, it ensures minimal conduction losses, enhancing overall system efficiency. The device can handle a continuous drain current (Id) of up to 110A at 25°C, allowing it to drive high-power loads effectively. Additionally, it supports a maximum power dissipation of 200W, providing robust performance under demanding conditions. The IRF3205 operates within a wide temperature range of -55°C to 175°C, ensuring reliability in diverse environments. Its fast switching capabilities and low gate charge make it ideal for applications such as DC motor control, power supplies, inverters, and battery management systems.Specifications
| Type: | N-Channel HEXFET Power MOSFET |
|---|---|
| Package: | TO-220AB |
| Drain-Source Voltage (Vds): | 55V |
| Gate-Source Voltage (Vgs): | ±20V |
| Continuous Drain Current (Id): | 110A at 25°C |
| Gate Threshold Voltage (Vgs(th)): | 3V (typical) |
| On-Resistance (Rds(on)): | 8mΩ at Vgs = 10V |
| Gate Charge (Qg): | 97.3nC at Vgs = 10V |
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