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About this item

The IRF3205 MOSFET (Pack of 3) is a high-performance N-channel power MOSFET designed for efficient switching applications. Housed in a TO-220 package, each MOSFET in this pack offers a maximum drain-source voltage (Vds) of 55V, making it suitable for various power electronics projects. With a low on-resistance (Rds(on)) of 8 mΩ at a gate-source voltage (Vgs) of 10V, it ensures minimal conduction losses, enhancing overall system efficiency. The device can handle a continuous drain current (Id) of up to 110A at 25°C, allowing it to drive high-power loads effectively. Additionally, it supports a maximum power dissipation of 200W, providing robust performance under demanding conditions. The IRF3205 operates within a wide temperature range of -55°C to 175°C, ensuring reliability in diverse environments. Its fast switching capabilities and low gate charge make it ideal for applications such as DC motor control, power supplies, inverters, and battery management systems.

Specifications

Type: N-Channel HEXFET Power MOSFET
Package: TO-220AB
Drain-Source Voltage (Vds): 55V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 110A at 25°C
Gate Threshold Voltage (Vgs(th)): 3V (typical)
On-Resistance (Rds(on)): 8mΩ at Vgs = 10V
Gate Charge (Qg): 97.3nC at Vgs = 10V

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