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The IRF540N (TO-220 N-Channel MOSFET, Pack of 2) is a powerful and robust transistor designed for switching and power applications, capable of handling a maximum drain-source voltage of 100 V and sustaining a continuous drain current of 33 A when driven with a gate-source voltage around 10 V. It features a low on-resistance (R_DS(on)) of approximately 0.044 Ω, which ensures efficient switching with minimal power loss. Manufactured using rugged HEXFET technology, the IRF540N is fast-switching, fully avalanche-rated, and suitable for both general-purpose and industrial-grade circuits. With a power dissipation capacity of up to 130 W, it can handle high-power tasks when adequately cooled or heat-sinked. It operates reliably over a wide temperature range from –55 °C to +175 °C, making it suitable for demanding environments. Common applications include driving motors, serving as switch elements in SMPS, implementing buck/boost converters, and controlling high-current power loads. However, it is important to note that the IRF540N is not a logic-level MOSFET; its optimal performance requires a 10 V gate drive, and at lower voltages like 5 V, efficiency decreases and heating increases. Overall, this MOSFET pack offers a reliable solution for high-voltage, high-current switching tasks when paired with appropriate gate drivers and thermal management.

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